[20p-233-1~10] Advanced ion microscopy for future nanoelectronics materials and devices

▲ [20p-233-5] Helium ion microscopy (HIM) for imaging fine line features patterned organic film with less damage

〇Shinichi Ogawa¹, Tomoya Ohashi², Shigeki Oyama², Yuki Usui² (1.AIST, 2.NISSAN CHEMICAL IND.)

Keywords:helium ion microscopy, surface observation, damage

Low damage obseravation of a fine line organic material was studied in comparison with helium ion microscopy (HIM) and secondary electron microsopy (SEM). Helium ions damaged the organic materials heavier in depth direction than electrons, while it kept original surface morphology with less transformation or shrink, so imaging of the filled organic materials into trenches by the HIM presumably shows more realistic than the SEM imaging.