The 79th JSAP Autumn Meeting, 2018

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21p-146-1~17] 15.4 III-V-group nitride crystals

Fri. Sep 21, 2018 1:30 PM - 6:00 PM 146 (Reception Hall)

Tsutomu Araki(Ritsumeikan Univ.), Narihito Okada(Yamaguchi Univ.)

2:00 PM - 2:15 PM

[21p-146-3] High temperature growth of N-polar GaN by THVPE

〇(M2)Daisuke Oozeki1, Nao Takekawa1, Naoya Kawamoto1, Akira Yamaguchi2, Hisashi Murakami1, Yoshinao Kumagai1, Kou Matsumoto2, Akinori Koukitu1 (1.TUAT, 2.TNSC)

Keywords:garium nitride, vapor phase epitaxy, THVPE