Ryosuke Aonuma

→ Search for Ryosuke Aonuma in Google Scholar

Speaker, Author, Co-Author

Sun. Mar 18, 2018 1:45 PM - 7:00 PM C302 (52-302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18p-C302-1~19] 13.7 Compound and power electron devices and process technology

4:45 PM - 5:00 PM

[18p-C302-12] Influence of gate metallization processes in GaAsSb/InGaAs Double-Gate Tunnel FET

Nobukazu Kise¹, 〇Ryosuke Aonuma¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech.)