Yuta Arata

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Speaker, Author, Co-Author

Tue. Mar 20, 2018 1:00 PM - 4:00 PM E201 (57-201)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-E201-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:45 PM - 3:00 PM

△ [20p-E201-7] Effect of NiO buffer layers on ε-Ga₂O₃ epitaxial growth on c-plane sapphire by mist chemical vapor deposition

〇(B)Yuta Arata¹, Daisuke Tahara¹, Shota Morimoto¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)