Oral presentation

[19p-C202-1~17] 17.3 Layered materials

Mon. Mar 19, 2018 1:45 PM - 6:30 PM C202 (52-202)

Akinobu Kanda(Univ. of Tsukuba), Yasuhide Ohno(Tokushima univ)

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1:45 PM - 2:15 PM

[19p-C202-1] [INVITED] Electrochemical etching technique for the investigation of physical properties in ultrathin FeSe

〇Atsushi Tsukazaki¹ (1.IMR, Tohoku Univ.)

2:15 PM - 2:30 PM

[19p-C202-2] [Young Scientist Presentation Award Speech] Exciton Hall effect in transition metal dichalcogenides

〇Masaru Onga¹, Yijin Zhang^2,3, Toshiya Ideue¹, Yoshihiro Iwasa^1,4 (1.Univ. of Tokyo, 2.Osaka Univ., 3.Max-Plank Inst., 4.RIKEN CEMS)

2:30 PM - 2:45 PM

△ [19p-C202-3] Evaluation of contact properties for semiconducting 2H phase of MoTe₂ via scanning gate microscopy

〇(B)Kohei Sakanashi¹, Kota Kamiya¹, Hidemitsu Ouchi¹, Tomoki Yamanaka¹, Katsuhiko Miyamoto¹, Takashige Omatsu¹, Jonathan P.Bird², Nobuyuki Aoki¹ (1.Chiba Univ., 2.SUNY Buffalo)

2:45 PM - 3:00 PM

[19p-C202-4] Strain engineering of electronic properties of monolayer transition metal dichalcogenide materials

〇Shuntaro Oshima¹, Masayuki Toyoda¹, Susumu Saito¹ (1.Tokyo Tech.)

3:00 PM - 3:15 PM

△ [19p-C202-5] Amplitude control of cantilevered MoS₂ by electrostatic force

〇Daiki Yoshikawa¹, Yuga Miyamoto¹, Kuniharu Takei¹, Takayuki Arie¹, Seiji Akita¹ (1.Osaka Pref. Univ.)

3:15 PM - 3:30 PM

[19p-C202-6] Control of Photoinduced Electron Transfer in MoS₂-Graphene Heterostructure by Applied Bias Voltage

〇Kenji Iida¹, Masashi Noda¹, Katsuyuki Nobusada¹ (1.IMS)

3:30 PM - 3:45 PM

△ [19p-C202-7] Electroluminescence Imaging of Polycrystalline Transition Metal Dichalcogenide Monolayers

〇Hirofumi Matsuoka¹, Jiang Pu¹, Lain-Jong Li², Tomo Sakanoue¹, Taishi Takenobu¹ (1.Nagoya Univ., 2.KAUST)

3:45 PM - 4:00 PM

[19p-C202-8] Study on MoS₂ thin-film electric double-layer transistors using ESR spectroscopy

〇Naho Tsunetomo¹, Shohei Iguchi¹, Yousang Won¹, Sinae Heo^2,3, Yesul Jeong², Yutaka Wakayama^2,3, Kazuhiro Marumoto^1,4 (1.Univ. Tsukuba, 2.NIMS, 3.Kyushu Univ., 4.TREMS, Univ. Tsukuba)

4:00 PM - 4:15 PM

[19p-C202-9] High-resolution ARPES of NbSe₂ atomic-layer thin films

〇Katsuaki Sugawara¹, Yuki Nakata², Ryota Shimizu³, Patric Han¹, Taro Hitosugi³, Keiji Ueno⁴, Takafumi Sato², Takashi Takahashi^2,1 (1.WPI-AIMR, Tohoku Univ., 2.Dept. Phys., Tohoku Univ., 3.Dept. Appl. Chem., Tokyo Tech., 4.Dept. Chem., Saitama Univ.)

4:30 PM - 4:45 PM

▲ [19p-C202-10] [Young Scientist Presentation Award Speech] Interface traps “extrinsically” deliver MIT in monolayer MoS₂ FET

〇Nan Fang¹, Kosuke Nagashio^1,2 (1.Tokyo Univ., 2.PRESTO-JST)

4:45 PM - 5:00 PM

[19p-C202-11] Extraction of gap states in MoS₂-FET from transient response with high time-resolved measurement

〇Koki Taniguchi¹, Kosuke Nagashio^1,2 (1.Tokyo Univ., 2.JST-PRESTO)

5:00 PM - 5:15 PM

△ [19p-C202-12] NEGF calculations of BTB tunneling in MoS₂/WS₂ in-plane heterojunctions

〇(M1)Tatsuya Kuroda¹, Nobuya Mori¹ (1.Osaka Univ.)

5:15 PM - 5:30 PM

△ [19p-C202-13] NEGF simulation of band-to-band tunneling in MoS₂/Ge heterojunction

〇Futo Hashimoto¹, Nobuya Mori¹ (1.Osaka Univ.)

5:30 PM - 5:45 PM

△ [19p-C202-14] Band to band tunneling in TypeⅢ p⁺-WSe₂/ WSe₂ hetero-structure

〇Shunyou Ka¹, Nan Fang¹, Keigo Nakamura¹, Keiji Ueno², Takashi Taniguchi³, Kenji Watanabe³, Kosuke Nagashio¹ (1.Tokyo Univ., 2.Saitama Univ., 3.NIMS)

5:45 PM - 6:00 PM

△ [19p-C202-15] Deposition of high-k dielectrics on 2D channel by P_O2 controlled thermal evaporation

〇Kohei Maruyama¹, Kosuke Nagashio^1,2 (1.The Univ. of Tokyo, 2.JST-PRESTO)

6:00 PM - 6:15 PM

[19p-C202-16] Back-gate bias architecture for control of carrier injection in WSe₂ FET

〇Takamasa Kawanago¹, Hiroyuki Takagi¹, Ryo Ikoma¹, Tomoaki Oba¹ (1.Tokyo Institute of Technology)

6:15 PM - 6:30 PM

[19p-C202-17] Thermal Conductivity of Suspended MoS₂/MoSe₂ Hetero Structures

〇Shinichiro Mouri¹, Syunsuke Fukushima¹, Yuhei Miyauchi², Kazunari Matsuda², Yasushi Nanishi¹, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Kyoto Univ.)

Oral presentation

[20a-C202-1~8] 17.3 Layered materials

Tue. Mar 20, 2018 10:00 AM - 12:15 PM C202 (52-202)

Ryo Kitaura(Nagoya Univ.)

△：奨励賞エントリー
▲：英語発表
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10:00 AM - 10:15 AM

▲ [20a-C202-1] [Young Scientist Presentation Award Speech] Growth of uniform hexagonal boron nitride film using chemical vapor deposition

〇Shengnan Wang¹, Alice Dearle¹, Hiroki Hibino^1,2, Kazuhide Kumakura¹ (1.NTT Basic Research Labs., 2.Kwansei Gakuin Univ.)

10:15 AM - 10:30 AM

△ [20a-C202-2] Aligned growth of MoS₂ and its application to in-plane heterostructures

〇Kenshiro Suenaga¹, Yoshihiro Shiratsuchi¹, Dong Ding¹, Kenji Kawahara^3,2, Hiroki Hibino², Hiroki Ago^1,2 (1.Kyushu Univ., 2.Global Innovation Center, 3.Kwansei Gakuin Univ.)

10:30 AM - 10:45 AM

△ [20a-C202-3] Synthesis of Large Single Crystal and Monolayer WS₂by Rapid Cooling Thermal CVD

〇(D)Chao Li¹, Toshiro Kaneko¹, Toshiaki Kato^1,2 (1.Tohoku Univ., 2.JST PRESTO)

10:45 AM - 11:00 AM

△ [20a-C202-4] MoS_2(1-x) Te_2x Deposition by co-Sputtering and Post-Deposition Sulfurization using (t-C₄H₉)₂S₂

〇Yusuke Hibino¹, Seiya Ishihara^1,4, Yuya Oyanagi¹, Naomi Sawamoto¹, Takumi Ohashi², Kentarou Matsuura², Hideaki Machida³, Masato Ishikawa³, Hiroshi Sudoh³, Hitoshi Wakabayashi², Atsushi Ogura¹ (1.Meiji Univ., 2.Tokyo Tech, 3.Gas-phase Growth Ltd., 4.JSPS Research Fellow)

11:15 AM - 11:30 AM

△ [20a-C202-5] 2D-MoS₂ Film Formation by Sputtering Method with Migration Control

〇Takumi Ohashi¹, Takuro Sakamoto¹, Kentaro Matsuura¹, Jun'ichi Shimizu¹, Mayato Toyama¹, Seiya Ishihara^2,3, Yusuke Hibino², Iriya Muneta¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Atsushi Ogura², Hitoshi Wakabayashi¹ (1.Tokyo Tech, 2.Meiji Univ., 3.JSPS Research Fellow)

11:30 AM - 11:45 AM

[20a-C202-6] Reduction of MoS₂-thin-film carrier density by low-power sputtering

〇Takuro Sakamoto¹, Takumi Ohashi¹, Kentaro Matsuura¹, Iriya Muneta¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1.Tokyo tech)

11:45 AM - 12:00 PM

[20a-C202-7] Crystallinity improvement of sputtered MoS₂ film by sulfur-powder annealing through insulating film.

〇Masaya Hamada¹, Kentaro Matsuura¹, Haruki Tanigawa¹, Takumi Ohashi¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech.)

12:00 PM - 12:15 PM

[20a-C202-8] Fabrication of monolayer SnS by supply and desorption control

〇Hayami Kawamoto¹, Naoki Higashitarumizu¹, Kosuke Nagashio^1,2 (1.Tokyo Univ., 2.PRESTO-JST)

Oral presentation

[20p-C202-1~7] 17.3 Layered materials

Tue. Mar 20, 2018 1:45 PM - 3:30 PM C202 (52-202)

Keiji Ueno(Saitama Univ.)

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1:45 PM - 2:00 PM

[20p-C202-1] Sputtered MoS₂ Thin Film Formation on CaF₂ (111) Substrate

〇(B)Zulkornain Bin Danial¹, Iriya Muneta¹, Naoki Hayakawa¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech)

2:00 PM - 2:15 PM

[20p-C202-2] Characterization of molybdenum disulfide (MoS₂) thin films fabricated by mist CVD

〇(D)Shota Sato¹, Masahito Sakamoto², Noriko Nitta^3,4, Li Liu¹, E. K. C. Pradeep⁴, Giang T. Dang⁴, Toshiyuki Kawaharamura^1,2,4 (1.Kochi Univ. of Technol. Eng. course, 2.Intelligent Mech. Sys. Eng, 3.Mater. Sci. and Eng. course, 4.Res. Inst.)

2:15 PM - 2:30 PM

[20p-C202-3] Soft X-ray absorption spectroscopy of h-BN grown by the diffusion and precipitation method

〇Satoru Suzuki¹, Yuichi Haruyama¹ (1.LASTI, Univ. of Hyogo)

2:30 PM - 2:45 PM

△ [20p-C202-4] Fabrication of self-passivated ultra-thin SnS layer by post-oxidation

〇Naoki Higashitarumizu¹, Hayami Kawamoto¹, Keiji Ueno², Kosuke Nagashio^1,3 (1.Tokyo Univ., 2.Saitama Univ., 3.PRESTO-JST)

2:45 PM - 3:00 PM

[20p-C202-5] SnS₂ growth and its gas-sensing application

〇Kenjiro Hayashi^1,2, Masako Kataoka¹, Jippo Hideyuki^1,2, Mari Ohfuchi^1,2, Taisuke Iwai¹, Shintaro Sato^1,2 (1.Fujitsu Lab., 2.Fujitsu)

3:00 PM - 3:15 PM

[20p-C202-6] Photovoltaic Gas response with MoS₂/Si pn heterostructure device

〇Naoya Ugomori¹, Hiroshi Tabata¹, Osamu Kubo¹, Mitsuhiro Katayama¹ (1.Osaka Univ.)

3:15 PM - 3:30 PM

[20p-C202-7] Observation of dc-bias-dependent carrier distribution on an exfoliated WSe₂/SiO₂ using scanning nonlinear dielectric microscopy

〇Kohei Yamasue¹, Toshiaki Kato², Toshiro Kaneko², Yasuo Cho¹ (1.RIEC, Tohoku Univ., 2.Grad. Sch. Eng., Tohoku Univ.)

Sessions

17 Nanocarbon Technology » 17.3 Layered materials

[19p-C202-1~17] 17.3 Layered materials

[19p-C202-1] [INVITED] Electrochemical etching technique for the investigation of physical properties in ultrathin FeSe

[19p-C202-2] [Young Scientist Presentation Award Speech] Exciton Hall effect in transition metal dichalcogenides

△ [19p-C202-3] Evaluation of contact properties for semiconducting 2H phase of MoTe₂ via scanning gate microscopy

[19p-C202-4] Strain engineering of electronic properties of monolayer transition metal dichalcogenide materials

△ [19p-C202-5] Amplitude control of cantilevered MoS₂ by electrostatic force

[19p-C202-6] Control of Photoinduced Electron Transfer in MoS₂-Graphene Heterostructure by Applied Bias Voltage

△ [19p-C202-7] Electroluminescence Imaging of Polycrystalline Transition Metal Dichalcogenide Monolayers

[19p-C202-8] Study on MoS₂ thin-film electric double-layer transistors using ESR spectroscopy

[19p-C202-9] High-resolution ARPES of NbSe₂ atomic-layer thin films

▲ [19p-C202-10] [Young Scientist Presentation Award Speech] Interface traps “extrinsically” deliver MIT in monolayer MoS₂ FET

[19p-C202-11] Extraction of gap states in MoS₂-FET from transient response with high time-resolved measurement

△ [19p-C202-12] NEGF calculations of BTB tunneling in MoS₂/WS₂ in-plane heterojunctions

△ [19p-C202-13] NEGF simulation of band-to-band tunneling in MoS₂/Ge heterojunction

△ [19p-C202-14] Band to band tunneling in TypeⅢ p⁺-WSe₂/ WSe₂ hetero-structure

△ [19p-C202-15] Deposition of high-k dielectrics on 2D channel by P_O2 controlled thermal evaporation

[19p-C202-16] Back-gate bias architecture for control of carrier injection in WSe₂ FET

[19p-C202-17] Thermal Conductivity of Suspended MoS₂/MoSe₂ Hetero Structures

[20a-C202-1~8] 17.3 Layered materials

▲ [20a-C202-1] [Young Scientist Presentation Award Speech] Growth of uniform hexagonal boron nitride film using chemical vapor deposition

△ [20a-C202-2] Aligned growth of MoS₂ and its application to in-plane heterostructures

△ [20a-C202-3] Synthesis of Large Single Crystal and Monolayer WS₂by Rapid Cooling Thermal CVD

△ [20a-C202-4] MoS_2(1-x) Te_2x Deposition by co-Sputtering and Post-Deposition Sulfurization using (t-C₄H₉)₂S₂

△ [20a-C202-5] 2D-MoS₂ Film Formation by Sputtering Method with Migration Control

[20a-C202-6] Reduction of MoS₂-thin-film carrier density by low-power sputtering

[20a-C202-7] Crystallinity improvement of sputtered MoS₂ film by sulfur-powder annealing through insulating film.

[20a-C202-8] Fabrication of monolayer SnS by supply and desorption control

[20p-C202-1~7] 17.3 Layered materials

[20p-C202-1] Sputtered MoS₂ Thin Film Formation on CaF₂ (111) Substrate

[20p-C202-2] Characterization of molybdenum disulfide (MoS₂) thin films fabricated by mist CVD

[20p-C202-3] Soft X-ray absorption spectroscopy of h-BN grown by the diffusion and precipitation method

△ [20p-C202-4] Fabrication of self-passivated ultra-thin SnS layer by post-oxidation

[20p-C202-5] SnS₂ growth and its gas-sensing application

[20p-C202-6] Photovoltaic Gas response with MoS₂/Si pn heterostructure device

[20p-C202-7] Observation of dc-bias-dependent carrier distribution on an exfoliated WSe₂/SiO₂ using scanning nonlinear dielectric microscopy

Authentication

Sessions

17 Nanocarbon Technology » 17.3 Layered materials

[19p-C202-1~17] 17.3 Layered materials

△ [19p-C202-3] Evaluation of contact properties for semiconducting 2H phase of MoTe2 via scanning gate microscopy

△ [19p-C202-5] Amplitude control of cantilevered MoS2 by electrostatic force

△ [19p-C202-7] Electroluminescence Imaging of Polycrystalline Transition Metal Dichalcogenide Monolayers

▲ [19p-C202-10] [Young Scientist Presentation Award Speech] Interface traps “extrinsically” deliver MIT in monolayer MoS2 FET

△ [19p-C202-12] NEGF calculations of BTB tunneling in MoS2/WS2 in-plane heterojunctions

△ [19p-C202-13] NEGF simulation of band-to-band tunneling in MoS2/Ge heterojunction

△ [19p-C202-14] Band to band tunneling in TypeⅢ p+-WSe2/ WSe2 hetero-structure

△ [19p-C202-15] Deposition of high-k dielectrics on 2D channel by PO2 controlled thermal evaporation

[20a-C202-1~8] 17.3 Layered materials

▲ [20a-C202-1] [Young Scientist Presentation Award Speech] Growth of uniform hexagonal boron nitride film using chemical vapor deposition

△ [20a-C202-2] Aligned growth of MoS2 and its application to in-plane heterostructures

△ [20a-C202-3] Synthesis of Large Single Crystal and Monolayer WS2 by Rapid Cooling Thermal CVD

△ [20a-C202-4] MoS2(1-x) Te2x Deposition by co-Sputtering and Post-Deposition Sulfurization using (t-C4H9)2S2

△ [20a-C202-5] 2D-MoS2 Film Formation by Sputtering Method with Migration Control

[20p-C202-1~7] 17.3 Layered materials

△ [20p-C202-4] Fabrication of self-passivated ultra-thin SnS layer by post-oxidation

Authentication

△ [19p-C202-3] Evaluation of contact properties for semiconducting 2H phase of MoTe₂ via scanning gate microscopy

△ [19p-C202-5] Amplitude control of cantilevered MoS₂ by electrostatic force

▲ [19p-C202-10] [Young Scientist Presentation Award Speech] Interface traps “extrinsically” deliver MIT in monolayer MoS₂ FET

△ [19p-C202-12] NEGF calculations of BTB tunneling in MoS₂/WS₂ in-plane heterojunctions

△ [19p-C202-13] NEGF simulation of band-to-band tunneling in MoS₂/Ge heterojunction

△ [19p-C202-14] Band to band tunneling in TypeⅢ p⁺-WSe₂/ WSe₂ hetero-structure

△ [19p-C202-15] Deposition of high-k dielectrics on 2D channel by P_O2 controlled thermal evaporation

△ [20a-C202-2] Aligned growth of MoS₂ and its application to in-plane heterostructures

△ [20a-C202-3] Synthesis of Large Single Crystal and Monolayer WS₂by Rapid Cooling Thermal CVD

△ [20a-C202-4] MoS_2(1-x) Te_2x Deposition by co-Sputtering and Post-Deposition Sulfurization using (t-C₄H₉)₂S₂

△ [20a-C202-5] 2D-MoS₂ Film Formation by Sputtering Method with Migration Control