[17p-P8-1~24] 13.5 Semiconductor devices and related technologies

[17p-P8-6] Static characteristic evaluation of low-temperature deposition process for SiGeHEMT by Sputter Epitaxy Method

〇Katsumi Okubo¹, Yosuke Aoyagi¹, Motohashi Akira¹, Degura Kyouhei¹, Hirose Nobumitsu², Kasamatsu Akifumi², Matsui Toshiaki², Tsukamoto Takahiro¹, Suda Yoshiyuki¹ (1.Tokyo Univ. of Agric. & Technol., 2.National Inst. of Information and Communications Technol)

Keywords:SiGe, HEMT, Sputter Epitaxy