[18a-G203-1~10] 13.5 Semiconductor devices and related technologies

[18a-G203-8] Electrical characteristics of p-channel GOI tunneling FETs fabricated on p-type GOI

〇Ryotaro Takaguchi¹, Kimihiko Kato¹, Mengnan Ke¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

Keywords:Tunneling FET, Germanium, Germanium on insulator

Ge is expected to realize tunneling FETs (TFET) with high ON current due to its narrow bandgap. In this study, we fabricated p-channel GOI TFETs on p-type GOI substrate (p-GOI p-TFET) and evaluated electrical properties by comparing with p-channel Ge TFETs fabricated on n-type bulk Ge substrate (n-Ge p-TFET). As p-GOI p-TFETs operate as p-TFETs in the accumulation mode, we can suppress leakage currents caused by some defects in p-TFET operation mode in comparison with n-Ge p-TFETs, which operate as p-TFETs in the inversion mode. Consequently, p-GOI p-TFETs show better subthreshold swing in a low drain current.