The 65h JSAP Spring Meeting, 2018

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18p-C302-1~19] 13.7 Compound and power electron devices and process technology

Sun. Mar 18, 2018 1:45 PM - 7:00 PM C302 (52-302)

Naoteru Shigekawa(Osaka City Univ.), Taketomo Sato(Hokkaido Univ.)

5:30 PM - 5:45 PM

[18p-C302-14] Ga2O3 trench MOSFETs fabricated using Ga2O3 films grown by HVPE

〇Kohei Sasaki1,2, Quang Tu Thieu1, Daiki Wakimoto1,2, Yuki Koishikawa1,2, Akio Takatsuka1, Akito Kuramata1,2, Shigenobu Yamakoshi1,2 (1.Novel Crystal Tech., 2.Tamura Corp.)

Keywords:Ga2O3, MOSFET, trench