Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3

ChenYi Su; Takuya Hoshii; Iriya Muneta; Hitoshi Wakabayashi; Kazuo Tsutsui; Hiroshi Iwai; Kuniyuki Kakushima

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18p-C302-1~19] 13.7 Compound and power electron devices and process technology

Sun. Mar 18, 2018 1:45 PM - 7:00 PM C302 (52-302)

Naoteru Shigekawa(Osaka City Univ.), Taketomo Sato(Hokkaido Univ.)

5:45 PM - 6:00 PM

▲ [18p-C302-15] Initial trap and hysteresis analysis of Atomic Layer Deposited Al₂O₃ on b-Ga₂O₃

〇(M1)ChenYi Su¹, Takuya Hoshii¹, Iriya Muneta¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Kuniyuki Kakushima¹ (1.Tokyo Institute of Technology)

Keywords:Ga2O3, hysteresis, ALD

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Presentation information

[18p-C302-1~19] 13.7 Compound and power electron devices and process technology

▲ [18p-C302-15] Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3

▲ [18p-C302-15] Initial trap and hysteresis analysis of Atomic Layer Deposited Al₂O₃ on b-Ga₂O₃