[18p-C302-1~19] 13.7 Compound and power electron devices and process technology

[18p-C302-8] Control of Oxide Interlayer for Improving the Reliability of SiO₂/GaN MOS Devices

〇Takahiro Yamada¹, Daiki Terashima¹, Kenta Watanabe¹, Mikito Nozaki¹, Hisashi Yamada², Tokio Takahashi², Mitsuaki Shimizu², Akitaka Yoshigoe³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST, 3.JAEA)

Keywords:GaN, SiO2, Thermal annealing