[18p-G203-1~18] 13.5 Semiconductor devices and related technologies

[18p-G203-2] Soft Errors in Thin-BOX SOI SRAMs Exposed to Heavy Ion Radiation

〇Daisuke Kobayashi¹, Kazuyuki Hirose¹, Taichi Ito², Yuya Kakehashi², Osamu Kawasaki², Takahiro Makino³, Takeshi Ohshima³, Daisuke Matsuura⁴, Takanori Narita⁴, Masahiro Kato⁴, Shigeru Ishii⁴, Kazunori Masukawa⁴ (1.ISAS/JAXA, 2.R&D/JAXA, 3.QST, 4.MHI Ltd.)

Keywords:Soft error, Cosmic ray, SOI

The SOI technology is often used to develop devices with low sensitivity to soft errors. Recent technologies have a buried oxide (BOX) layer thinned down to 10 nm, and some of them have a well structure buried underneath it. This buried well structure enables us to use flexibly back bias (V_B) conditioning. We recently tested such an SOI technology using radiation beams that simulate cosmic rays and found a hundredfold increase in the soft error sensitivity for a certain V_B condition. We would like to share this result and discuss its physics.