The 65h JSAP Spring Meeting, 2018

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13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[19a-C101-1~10] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Mon. Mar 19, 2018 9:15 AM - 11:45 AM C101 (52-101)

Kuniyuki Kakushima(Titech)

11:00 AM - 11:15 AM

[19a-C101-8] SiC Nanodot Formation in Bulk-Si Substrate using Hot C+ Ion Implantation (Ⅱ): Dependebcy of Ion Implantation Temperature

〇Shinji Nakada1, Masaki Yamamoto1, Sho Irie1, Yusuke Omata1, Takashi Aoki1, Toshiyuki Sameshima2, Tomohisa Mizuno1 (1.Kanagawa Univ., 2.Tokyo Univ Agri. Tech.)

Keywords:SiC, hot ion impantation, quantum dot