[19a-C302-1~12] 13.7 Compound and power electron devices and process technology

[19a-C302-9] Characterization of traps in MOCVD p-GaN by low-frequency capacitance DLTS

〇(M1)Tatsuya Kogiso¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

Keywords:DLTS, p-GaN

We have studied traps in p-GaN using the p⁺⁺p^-n⁺ junction grown by MOCVD on n⁺-GaN substrate with capacitance (C) DLTS measurements. 1 MHz CDLTS is usually employed, but the lowest temperature is restricted to around 200 K due to the freeze-out of Mg acceptors. In this study, 1 kHz CDLTS is applied and the lowest measurement is extended to 110 K. Two hole traps labelled H_a (0.29 eV) and H_b (0.33 eV) are found with high trap concentrations.