[19a-C302-1~12] 13.7 Compound and power electron devices and process technology

[19a-C302-10] Defect characterization of GaN substrate with hot implant process by TEM

〇Junko Maekawa¹, Hitoshi Kawanowa¹, Masahiko Aoki¹, Katsumi Takahiro², Toshiyuki Isshiki² (1.Ion Technology Center Co., Ltd, 2.Kyoto Institute of Technology)

Keywords:GaN, Hot implantation, Stacking fault

The Si ion implantation process has been used as n- type doping technology for GaN substrate. However, the implantation technology for p-type GaN has not been optimized yet. The hot implantation process has been widely used for SiC device and its crystallinity has been studied so far. We will report how the crystallinity of GaN substrate will change by applying the hot implantation process.