[20a-B401-1~6] 7.3 Micro/Nano patterning and fabrication

[20a-B401-3] Stochastic Simulation of Pattern Formation in Electron Beam Lithography

〇Masanori Koyama¹, Masamitsu Shirai¹, Hiroaki Kawata¹, Yoshihiko Hirai¹, Masaaki Yasuda¹ (1.Osaka Pref. Univ.)

Keywords:electron beam lithography, simulation, resist pattern

The pattern formation in electron beam lithography was simulated using the stochastic method. In the negative type resist, the effect of electron exposure was introduced by the crosslinking between the resist polymer. The selected unit reacted with another monomer unit within critical reaction radius and the monomers crosslinked with each other. The rate of the crosslinking was set proportional to the absorbed energy distribution in the resist calculated by the Monte Carlo simulation of electron scattering. In the development simulation, the resist polymers with relatively small molecular weight were removed from the resist structure. The difference of the pattern profiles according to the acceleration voltage was reproduced.