[20a-D103-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [20a-D103-9] Consideration of gate insulator on 4H-SiC Si face using a SiNx layer by ALD

〇Teruaki Kumazawa¹, Mituo Okamoto¹, Miwako Iijima¹, Yohei Iwahashi², Shinzi Fujikake¹, Tsuyoshi Araoka³, Tae Tawara¹, Hiroshi Kimura³, Shinsuke Harada¹, Hajime Okumura¹ (1.AIST, 2.Toyota Motor Co., 3.Fuji Electric Co.,Ltd.)

Keywords:SiC, MOS, ALD