10:15 AM - 10:30 AM
[20a-E201-5] Growth of high-quality single crystals of β-Ga2O3 by FZ method
Keywords:beta-Ga2O3, wide-gap semiconductor, crystal growth
We have developed the floating zone (FZ) method for the growth of high-quality β-Ga2O3 crystals, which makes noble metal crucibles unnecessary and enables cost reduction, imurity control, and dopant control simultaneously.