[20p-C101-1~11] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[20p-C101-2] Method for monitoring silicon epitaxial growth process in minimal CVD reactor

Mitsuko Muroi¹, Miya Matsuo¹, 〇Hitoshi Habuka¹, Takanori Mikahara^2,3, Shin-ichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama National Univ., 2.MINIMAL, 3.AIST)

Keywords:MINIMAL FAB, Epitaxy, Growth process

For monitoring the silicon epitaxial growth process occurring in the Minimal CVD reactor, the quartz crystal microbalance was installed in the exhaust line. Its frequency behavior obtained during the film deposition will be reported.