Hiroshi Nohira

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Speaker, Author, Co-Author

Thu. Sep 19, 2019 9:00 AM - 12:15 PM E305 (E305)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[19a-E305-1~12] 13.3 Insulator technology

10:00 AM - 10:15 AM

[19a-E305-5] Bias-applied hard x-ray photoelectron spectroscopy study of HfO₂/SiO₂ interface dipole modulation

〇Hiroshi Nohira¹, Reito Wada¹, Akira Yasui², Noriyuki Miyata³ (1.Tokyo City Univ., 2.JASRI, 3.AIST)