Masahiko Kuraguchi

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Speaker, Author, Co-Author

Fri. Sep 20, 2019 1:30 PM - 5:35 PM E301 (E301)

Symposium (Oral)
| Symposium (technical)
| Etching Technology for Nitride Semiconductors: recent progress in high-controllable and low-damaging process

[20p-E301-1~9] Etching Technology for Nitride Semiconductors: recent progress in high-controllable and low-damaging process

5:20 PM - 5:35 PM

[20p-E301-9] Surface Treatment of Recess-etched GaN

〇Masahiko Kuraguchi¹, Toshiki Hikosaka¹, Aya Shindome¹, Yosuke Kajiwara¹, Daimotsu Kato¹, Hiroshi Ono¹, Akira Mukai¹, Shinya Nunoue¹ (1.Corporate R&D Center, Toshiba Corp.)

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