Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21p-E310-1~12] 15.4 III-V-group nitride crystals

Sat. Sep 21, 2019 12:45 PM - 4:00 PM E310 (E310)

Atsushi Kobayashi(Univ. of Tokyo), Koichi Naniwae(USHIO OPTO SEMICONDUCTORS, INC.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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12:45 PM - 1:00 PM

[21p-E310-1] Etching depth control in GaN oxide-formed two-step wet-etching method

〇Yasuharu Kiyotou¹, Hiroshi Fujioka², Narihiko Maeda¹ (1.Tokyo Univ. of Tech., 2.IIS, The Univ. of Tokyo)

1:00 PM - 1:15 PM

[21p-E310-2] - Laser Induced Ohmic Contact Formation(LOC) - Laser-induced High Performance Local Ohmic Electrode Formation for Vertical GaN Devices

〇Teruhisa Kawasaki¹, Noriko Kurose², Tsutomu Araki², Yoshinobu Aoyagi² (1.Sumitomo Heavy Inds., 2.Ritsumeikan Univ.)

1:15 PM - 1:30 PM

[21p-E310-3] Study of Si-ion-implantation Process on High-purity HVPE-AlN Substrates to Form n-type Region

〇Yudai Shimizu¹, Daichi Saito¹, Nao Takekawa¹, Ken Goto¹, Toru Nagashima², Reo Yamamoto², Bo Monemar³, Yoshinao Kumagai^1,4 (1.Tokyo Univ. of Agri. and Tech., 2.Tokuyama Corporation, 3.Linkoping Univ., 4.TUAT IGIR)

1:30 PM - 1:45 PM

[21p-E310-4] Infuluence of InGaN underlying layer on device characteristics of AlGaN/GaN HEMT

〇(M1)Toshifumi Nomura¹, Hideyuki Itakura¹, Motoki Tamura², Narihito Okada^1,2, Kazuyuki Tadatomo^1,2 (1.Grad. School of Sci. & Eng. for Innovation, Yamaguchi Univ., 2.Department of Eng, Yamaguchi Univ.)

1:45 PM - 2:00 PM

△ [21p-E310-5] Electronic Structure Analysis in GaN with Mg Impurities and Screw Dislocation

〇Takashi Nakano¹, Yosuke Harashima², Kenta Chokawa², Masaaki Araidai^2,1, Kenji Shiraishi^2,1, Atsushi Oshiyama², Akira Kusaba³, Yoshihiro Kangawa^4,2, Atsushi Tanaka², Yoshio Honda^2,1, Hiroshi Amano^2,1 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Computer Centre, Gakushuin Univ., 4.RIAM, Kyushu Univ.)

2:00 PM - 2:15 PM

[21p-E310-6] Modeling of the hopping conduction in semiconductors with dislocation and impurities from first-principles calculation

〇Yosuke Harashima¹, Takashi Nakano², Atsushi Oshiyama¹, Kenji Shiraishi^1,2 (1.IMaSS, Nagoya Univ., 2.Grad. Sch. Engineering, Nagoya Univ.)

2:30 PM - 2:45 PM

△ [21p-E310-7] Evaluation of the Band Structure at Metal/GaN Interfaces Using Hard X-ray Photoelectron Spectroscopy

〇Hirotaka Mizushima¹, Ryoji Arai¹, Yuta Inaba¹, Shunsuke Yamashita¹, Yudai Yamaguchi¹, Yuya Kanitani¹, Yoshihiro Kudo¹, Tatsushi Hamaguchi¹, Rintaro Koda¹, Katsunori Yanashima¹, Shigetaka Tomiya¹ (1.Sony Corporation)

2:45 PM - 3:00 PM

△ [21p-E310-8] Adatom stability on Polar AlN Surfaces During MOVPE

〇Yuya Inatomi¹, Kangawa Yoshihiro^1,2,3, Motoaki Iwaya⁴, Hideto Miyake⁵ (1.Kyushu Univ., 2.RIAM, Kyushu Univ., 3.IMaSS, Nagoya Univ., 4.Faculty of Science and Technology, Meijo Univ., 5.Graduate School of Regional Innovation Studies, Mie Univ.)

3:00 PM - 3:15 PM

[21p-E310-9] Theoretical analysis of photon-recycling effect on external quantum efficiency of radiation

〇Hidehiro Asai¹, Kazunobu Kojima², Shigefusa Chichibu², Koichi Fukuda¹ (1.AIST, 2.IMRAM-Tohoku Univ.)

3:15 PM - 3:30 PM

[21p-E310-10] Growth of AlGaN/InGaN hetero structure grown on AlN template for cyclotron resonance measurement

〇Masatomo Sumiya¹, Kiyotaka Fukuda^1,2, Shuhei Yashiro^1,2, Toru Honda², Dickson Kindole³, Kanji Takehana¹, Yasutaka Imanaka^1,3 (1.NIMS, 2.Kogakuin Univ., 3.Hokkaido Univ.)

3:30 PM - 3:45 PM

[21p-E310-11] Effective Mass in InGaN two-dimensional electron systems

〇Yasutaka Imanaka^1,2, Dickson Kindole^1,2, Kanji Takehana¹, Masatomo Sumiya¹ (1.NIMS, 2.Hokkaido Univ.)

3:45 PM - 4:00 PM

[21p-E310-12] Stable structure and electronic states of 2-dimensional group-III nitrides on van der Waals substrates

〇Tomoe Yayama¹, Anh Koa Augustin Lu³, Tetsuya Morishita^2,3, Takeshi Nakanishi^2,3 (1.Kogakuin Univ., 2.AIST, CD-FMat, 3.AIST, MathAM-OIL)

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