Oral presentation

[20a-E304-1~10] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Fri. Sep 20, 2019 9:00 AM - 11:45 AM E304 (E304)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-E304-1] Photoluminescence properties of Cu⁺/Sn²⁺ -activated BaO-B₂O₃ glass

〇Tomoya Konishi¹, Chisaki Kubo¹, Shun Kamada², Weiwei Xu¹, Takanori Kozai¹, Takeshi Fujihara¹, Tao Zheng¹, Masaru Kamano¹ (1.NIT, Anan, 2.Tokushima Univ.)

9:15 AM - 9:30 AM

[20a-E304-2] Influence of Cu concentration and heat treatment on radiophotoluminescence phenomenon in Cu-doped silica glass prepared from porous silica glass

〇Yuya Takada¹, Ryo Hashikawa¹, Atsushi Kinomura², Takeshi Saito², Arifumi Okada¹, Takashi Wakasugi¹, Kohei Kadono¹ (1.Kyoto Inst. of Tech., 2.KURNS)

9:30 AM - 9:45 AM

[20a-E304-3] Temperature dependence of excitonic stimulated emission from micrometer-thick MgZnO films

〇(M2)Shusuke Fujii¹, Adachi Yutaka², Uchino Takashi¹ (1.Kobe Univ., 2.NIMS)

9:45 AM - 10:00 AM

[20a-E304-4] Effect of intercalation on photoluminescence properties of hexaonal boron nitride

〇Takuya Tsujimura¹, Takashi Uchino¹ (1.Kobe Univ.)

10:00 AM - 10:15 AM

[20a-E304-5] Two photon absorption coefficient in Bi₂O₃ containing oxide glasses

〇Akira Saitoh¹, Katsuki Hayashi¹, Yukihide Ishibashi¹, Tsuyoshi Asahi¹ (1.Ehime Univ.)

10:30 AM - 10:45 AM

[20a-E304-6] Viscoelastic study of alkali-/alkaline earth-aluminophophate glass at high temperature

〇Naoyuki Kitamura¹, Takahiko Hayashido², Nana Matsushita², Kohei Fukumi¹, Hiroaki Uchiyama², Hiromitsu Kozuka² (1.AIST, 2.Kansai Univ.)

10:45 AM - 11:00 AM

[20a-E304-7] Development of Lead-free Low Melting Frit Glass Based on TeO₂-MoO₃ System

〇Kunihiko Kano¹, Takahisa Yamaguchi¹ (1.Nippon Electric Glass Co., Ltd.)

11:00 AM - 11:15 AM

▲ [20a-E304-8] Studies on Mechanical Property of Poloxamer 407 by Molecular Dynamics

Te-Hsun Yang¹, 〇(M2)Jia-Hong Jian¹, Jia-Han Li¹ (1.National Taiwan Univ.)

11:15 AM - 11:30 AM

[20a-E304-9] Crystallization behavior of Na₂MSiO₄ glass

〇Tsuyoshi Honma¹, Miyuri Terasawa¹, Takayuki Komatsu¹ (1.Nagaoka Univ. Tech.)

11:30 AM - 11:45 AM

[20a-E304-10] The structural origin of high density of Gd₂O₃-MoO₃-B₂O₃ glass and low density of b'-Gd₂(MoO₄)₃ crystal

〇Kenji Shinozaki¹, Hiroki Tsuchiya², Tsuyoshi Honma², Takayuki Komatsu² (1.AIST, 2.Nagaoka Univ. Tech.)

Oral presentation

[20p-E304-1~13] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Fri. Sep 20, 2019 1:45 PM - 5:15 PM E304 (E304)

Kenji Shinozaki(AIST), Tamihiro Gotoh(Gunma Univ.), Toshihiro Nakaoka(Sophia Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[20p-E304-1] Relationship between residual stress and short-range structure in chemically strengthened glass

〇Nobuaki Terakado¹, Ryusei Sasaki¹, Shingo Ebukuro¹, Yoshihiro Takahashi¹, Takumi Fujiwara¹, Shuji Orihara², Yoshio Orihara² (1.Tohoku Univ., 2.Orihara Industrial)

2:00 PM - 2:15 PM

[20p-E304-2] Effect of R₂O₃-Substitution on Structure of ZnO-P₂O₅ Glasses

〇Hirokazu Masai¹, Yohei Onodera², Shinji Kohara³, Akitoshi Koreeda⁴, Yasuhiro Fujii⁴, Takahiro Ohkubo⁵ (1.AIST, 2.Kyoto Univ., 3.NIMS, 4.Ritsumeikan Univ., 5.Chiba Univ.)

2:15 PM - 2:30 PM

[20p-E304-3] Microscopic ordering in amorphous poly(n-alkylsilsesquioxane) liquids and solids synthesized by a cosolvent-free hydrolytic polycondensation and aging

〇Koichi Kajihara¹, Seto Ryosuke¹, Kanamura Kiyoshi¹, Onodera Yohei^2,3, Kohara Shinji³ (1.TMU, 2.Kyoto Univ., 3.NIMS)

2:30 PM - 2:45 PM

[20p-E304-4] Local structure of Nb and/or N doped TiO₂ film formed by reactive sputtering

〇Toshihiro Okajima¹, JunJun Jia², Yuzo Shigesato³ (1.SAGA-LS, 2.Waseda Univ., 3.Aoyamagakuin Univ.)

2:45 PM - 3:00 PM

▼ [20p-E304-5] Flexible Solution-processed Metal Oxide Thin Film Transistors Operated at 23 MHz Achieved by a Damage-free Patterning Process

〇(D)Xiaozhu Wei¹, Shohei Kumagai¹, Kotaro Tsuzuku², Akifumi Yamamura¹, Tatsuyuki Makita¹, Mari Sasaki¹, Shun Watanabe¹, Jun Takeya¹ (1.UTokyo., 2.Pi-crystal, Inc.)

3:15 PM - 3:30 PM

△ [20p-E304-6] Electron-beam radial distribution function analysis of amorphous boron carbide

〇Kousuke Nishikuma¹, Manabu Ishimaru¹, Ryusuke Nakamura² (1.Kyushu Inst. Technol., 2.Osaka Pref. Univ.)

3:30 PM - 3:45 PM

[20p-E304-7] Mechanism of Crystallization of Electron-Beam-Evaporated Amorphous Si Films on Textured Glass Substrates by FLA

〇Aimi Yago¹, Keisuke Ohdaira¹ (1.JAIST)

3:45 PM - 4:00 PM

△ [20p-E304-8] Phase transition behavior in MnTe sputtering films

〇(D)Shunsuke Mori¹, Daisuke Ando¹, Yuji Sutou¹ (1.Tohoku Univ.)

4:00 PM - 4:15 PM

▲ [20p-E304-9] Bidirectional and Self-selective Characteristics of PN Diode Based N-doped Cr₂Ge₂Te₆ Phase Change Materials

〇(D)YI SHUANG¹, Shogo Hatayama¹, Jun Seop An², Ando Daisuke¹, Yun Heub Song², Yuji Sutou¹ (1.Tohoku Univ., 2.Hanyang Univ.)

4:15 PM - 4:30 PM

[20p-E304-10] Subgap absorption peaks in selenium films

〇Tamihiro Gotoh¹ (1.Gunma Univ.)

4:30 PM - 4:45 PM

[20p-E304-11] Photoconductivity in Amorphous Chalcogenide Films

〇Koji Hayashi¹ (1.Gifu Univ.)

4:45 PM - 5:00 PM

[20p-E304-12] Silver photodiffusion into amorphous germanium sulfide - excitation light wavelength dependence

〇Yoshifumi Sakaguchi¹, Takayasu Hanashima¹, Al-Amin Amed Simon², Maria Mitkova² (1.CROSS, 2.BSU)

5:00 PM - 5:15 PM

[20p-E304-13] Investigation of Photodoping Process in Ag/GeS₂ Double Layer Films using Neutron Beam

〇Yoshihisa Murakami¹, Takehisa Shibuya², Moriaki Wakaki², Yoshifumi Sakaguchi³ (1.Tsukuba Univ. of Tech., 2.Tokai Univ., 3.CROSS)

Poster presentation

[19p-PA7-1~10] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Thu. Sep 19, 2019 4:00 PM - 6:00 PM PA7 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[19p-PA7-1] X-ray induced optical absorption in fused quartz

〇Akihiro Haruki¹, Kento Nanbo¹, Nobu Kuzuu¹, Hideharu Horikoshi² (1.Fuku Univ., 2.Tosoh SGM)

4:00 PM - 6:00 PM

[19p-PA7-2] Mechanism of Suppression of Devitrification by Chlorine-containing Silica Glass

〇Naohiro Horii¹, Nobu Kuzuu², Hideharu Horikoshi³ (1.NIT (KOSEN) Fukui Col., 2.Univ. of Fukui, 3.Tosoh SGM)

4:00 PM - 6:00 PM

[19p-PA7-3] Improvement of Analysis Method for Determination of Diffusion Coefficient of OH groups Through the Binding Interface of Silica Glasses

〇Yusuke Aoki¹, Yuya Sugiyama¹, Nobu Kuzuu¹, Hideharu Horikoshi², Naohiro Horii³ (1.Univ. of Fukui, 2.Tosoh SGM, 3.Nat'l Inst. Tech. FukuiColl .)

4:00 PM - 6:00 PM

[19p-PA7-4] Fabrication and size control of solid-state nanopores with metal nanoparticles

〇Yu Tatemizo¹, Muneyuki Naito¹ (1.Konan Univ.)

4:00 PM - 6:00 PM

[19p-PA7-5] On the influence of critical film thickness of Mn-doped ZnO thin film deposited on Al2O3 (0001) substrate

〇(M1)Maria Yamanobe¹, Tamamoto Yuri¹, Guan Sujun¹, Zhao Xinwei¹ (1.Tokyo Univ Sci.)

4:00 PM - 6:00 PM

[19p-PA7-6] Glass formation, thermal and optical properties in Ga-Ge-Te+M (M = Sn, Sb, Bi) system

〇Daichi Shirai¹, Shigeru Yamamoto¹, Arifumi Okada¹, Takashi Wakasugi¹, Kohei Kadono¹ (1.Kyoto Inst. of Tech.)

4:00 PM - 6:00 PM

[19p-PA7-7] Estimation of absorption edge at the short wavelength side in Ge-Sb-S glass and influence of CsCl and Oxygen on the absorption edge

〇Kohei Iwasaki¹, Shigeru Yamamoto¹, Arifumi Okada¹, Takashi Wakasugi¹, Kohei Kadono¹ (1.Kyoto Inst. of Tech.)

4:00 PM - 6:00 PM

[19p-PA7-8] AC Impedance measurement under gamma-ray irradiation on GeTe thin films

〇(M2)Hyoseong Park¹, Tatsuya Watanabe¹, Isao Yoda², Yoshinori Shohmitsu³, Shigeo Kawasaki³, Toshihiro Nakaoka¹ (1.Sophia Univ., 2.Tokyo Tech, 3.JAXA)

4:00 PM - 6:00 PM

[19p-PA7-9] Cyclic voltammetry and effect of gamma-ray irradiation in GeTe thin films

〇(M1)Tatsuya Watanabe¹, Hyoseong Park¹, Isao Yoda², Yoshinori Shohmitsu³, Shigeo Kawasaki³, Toshihiro Nakaoka¹ (1.Sophia Univ., 2.Tokyo Tech, 3.JAXA)

4:00 PM - 6:00 PM

[19p-PA7-10] Dependence of electrode size on operation energy in Cu₂GeTe₃ phase change memory

〇(M1)Taira Iijima¹, Daisuke Ando¹, Yuji Sutou¹, Jun Seop An², Yun Heub Song² (1.Tohoku Univ., 2.Hanyang Univ.)

Sessions

16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[20a-E304-1~10] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[20a-E304-1] Photoluminescence properties of Cu⁺/Sn²⁺ -activated BaO-B₂O₃ glass

[20a-E304-2] Influence of Cu concentration and heat treatment on radiophotoluminescence phenomenon in Cu-doped silica glass prepared from porous silica glass

[20a-E304-3] Temperature dependence of excitonic stimulated emission from micrometer-thick MgZnO films

[20a-E304-4] Effect of intercalation on photoluminescence properties of hexaonal boron nitride

[20a-E304-5] Two photon absorption coefficient in Bi₂O₃ containing oxide glasses

[20a-E304-6] Viscoelastic study of alkali-/alkaline earth-aluminophophate glass at high temperature

[20a-E304-7] Development of Lead-free Low Melting Frit Glass Based on TeO₂-MoO₃ System

▲ [20a-E304-8] Studies on Mechanical Property of Poloxamer 407 by Molecular Dynamics

[20a-E304-9] Crystallization behavior of Na₂MSiO₄ glass

[20a-E304-10] The structural origin of high density of Gd₂O₃-MoO₃-B₂O₃ glass and low density of b'-Gd₂(MoO₄)₃ crystal

[20p-E304-1~13] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[20p-E304-1] Relationship between residual stress and short-range structure in chemically strengthened glass

[20p-E304-2] Effect of R₂O₃-Substitution on Structure of ZnO-P₂O₅ Glasses

[20p-E304-3] Microscopic ordering in amorphous poly(n-alkylsilsesquioxane) liquids and solids synthesized by a cosolvent-free hydrolytic polycondensation and aging

[20p-E304-4] Local structure of Nb and/or N doped TiO₂ film formed by reactive sputtering

▼ [20p-E304-5] Flexible Solution-processed Metal Oxide Thin Film Transistors Operated at 23 MHz Achieved by a Damage-free Patterning Process

△ [20p-E304-6] Electron-beam radial distribution function analysis of amorphous boron carbide

[20p-E304-7] Mechanism of Crystallization of Electron-Beam-Evaporated Amorphous Si Films on Textured Glass Substrates by FLA

△ [20p-E304-8] Phase transition behavior in MnTe sputtering films

▲ [20p-E304-9] Bidirectional and Self-selective Characteristics of PN Diode Based N-doped Cr₂Ge₂Te₆ Phase Change Materials

[20p-E304-10] Subgap absorption peaks in selenium films

[20p-E304-11] Photoconductivity in Amorphous Chalcogenide Films

[20p-E304-12] Silver photodiffusion into amorphous germanium sulfide - excitation light wavelength dependence

[20p-E304-13] Investigation of Photodoping Process in Ag/GeS₂ Double Layer Films using Neutron Beam

[19p-PA7-1~10] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[19p-PA7-1] X-ray induced optical absorption in fused quartz

[19p-PA7-2] Mechanism of Suppression of Devitrification by Chlorine-containing Silica Glass

[19p-PA7-3] Improvement of Analysis Method for Determination of Diffusion Coefficient of OH groups Through the Binding Interface of Silica Glasses

[19p-PA7-4] Fabrication and size control of solid-state nanopores with metal nanoparticles

[19p-PA7-5] On the influence of critical film thickness of Mn-doped ZnO thin film deposited on Al2O3 (0001) substrate

[19p-PA7-6] Glass formation, thermal and optical properties in Ga-Ge-Te+M (M = Sn, Sb, Bi) system

[19p-PA7-7] Estimation of absorption edge at the short wavelength side in Ge-Sb-S glass and influence of CsCl and Oxygen on the absorption edge

[19p-PA7-8] AC Impedance measurement under gamma-ray irradiation on GeTe thin films

[19p-PA7-9] Cyclic voltammetry and effect of gamma-ray irradiation in GeTe thin films

[19p-PA7-10] Dependence of electrode size on operation energy in Cu₂GeTe₃ phase change memory

Authentication

Sessions

16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[20a-E304-1~10] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

▲ [20a-E304-8] Studies on Mechanical Property of Poloxamer 407 by Molecular Dynamics

[20p-E304-1~13] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

▼ [20p-E304-5] Flexible Solution-processed Metal Oxide Thin Film Transistors Operated at 23 MHz Achieved by a Damage-free Patterning Process

△ [20p-E304-6] Electron-beam radial distribution function analysis of amorphous boron carbide

△ [20p-E304-8] Phase transition behavior in MnTe sputtering films

▲ [20p-E304-9] Bidirectional and Self-selective Characteristics of PN Diode Based N-doped Cr2Ge2Te6 Phase Change Materials

[19p-PA7-1~10] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Authentication

▲ [20p-E304-9] Bidirectional and Self-selective Characteristics of PN Diode Based N-doped Cr₂Ge₂Te₆ Phase Change Materials