[18p-B31-1~16] 15.3 III-V族エピタキシャル結晶・エピタキシーの基礎

▲ [18p-B31-2] Metallic selenides as the buffers for GaAs grown on Si (111)

〇(PC)YUCIAN WANG¹、Nobuaki Kojima¹、Kei Kawakatsu¹、Akio Yamamoto¹、Yoshio Ohshita¹、Masafumi Yamaguchi¹ (1.Toyota Technological Institute)

キーワード：metal selenides, twin formation, GaAs/Si

Growth of heteroepitaxial GaAs layers on Si substrates is attractive because of its possible application for monolithically integrated electronic and optoelectronic devices. For the GaAs grown on Si or Ge (111), there are several potential merits to extend their applications. In this study, the crystalline improvement of GaAs grown on metal (Ga or In) selenides films is studied. We have found that the inevitable bonding between Ga and Se on the top of In₂Se₃ was observed. Further, the wettability of the GaAs nucleus has been improved by irradiating Ga₂Se₃ surface with As, Ga, and Se simultaneously. The twin-domain less than 2% for 1 μm-GaAs grown on an In₂Se₃/Si (111)4^o off-cut to [11-2] has been achieved by introducing Ga₂Se₃ on In₂Se₃ with the subsequent (As-Ga-Se) treatment.