[18p-E304-1~10] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[18p-E304-2] Reduction of boron diffusion by fluorine in pre-amorphized Si

〇Ryotaro Kiga¹, Masashi Uematsu¹, Kohei Itoh¹ (1.Keio Univ.)

Keywords:diffusion, silicon, fluorine

BF₂⁺ ion implantation is extensively utilized for B introduction. It has been revealed that presence of F reduces transient-enhanced diffusion of B in Si, while the detail of the mechanism is not fully understood yet. Previous studies suggested two mechanisms: reduction of kick-out diffusion by emission of vacancies due to the presence of F, and B immobilization due to direct interaction between F and B. We have determined that both two mechanisms coexist in the system by performing experiments utilizing Si isotope multilayers. In this work, we established a quantitative model for the reduction of B diffusion by analyzing experimental profiles using numerical calculation.