[18p-PB2-1~4] 13.3 Insulator technology

▲ [18p-PB2-2] The effect of Hf-ion implantation on the charge trapping characteristics of MONOS-type memory devices

〇(M1)Rahul Agrawal¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

Keywords:Non-volatile memories, Ion-implantation, ESR