Oral presentation

[19a-E305-1~12] 13.3 Insulator technology

Thu. Sep 19, 2019 9:00 AM - 12:15 PM E305 (E305)

Shosuke Fujii(Toshiba Memory), Yasushi Hotta(Univ. of Hyogo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[19a-E305-1] TEM Tracking Study of Silicon Nanopillar Oxidation

〇Takuto Wako¹, Hiroaki Kariyazaki², Makoto Kuroda¹, Satoru Miyamoto¹, Hiroyuki Fujimori², Tetsuo Endoh^3,4, Kohei Itoh¹ (1.Keio Univ., 2.GlobalWafers Japan, 3.CIES Tohoku Univ., 4.JST-ACCEL)

9:15 AM - 9:30 AM

[19a-E305-2] Re-Examination of sulfur treatment effects on Al₂O₃/InGaAs MOS interface properties

〇SANghee YOON¹, Kimihiko Kato¹, Chiaki Yokoyama¹, Daehwan Ahn¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Tokyo University)

9:30 AM - 9:45 AM

[19a-E305-3] Leakage current of sputter fabricated AlScN film

〇Kazuki Kusafuka¹, Sunglin Tsai¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kuniyuki Kakushima¹ (1.Tokyo Tech. School of Eng., 2.Tokyo Tech. IIR)

9:45 AM - 10:00 AM

[19a-E305-4] Inspection and evaluation of chemical solution oxidation methods for metal / Si structures

〇Kazuki Harada¹, Yositaka Iwazaki¹, Tomo Ueno¹ (1.TAT)

10:00 AM - 10:15 AM

[19a-E305-5] Bias-applied hard x-ray photoelectron spectroscopy study of HfO₂/SiO₂ interface dipole modulation

〇Hiroshi Nohira¹, Reito Wada¹, Akira Yasui², Noriyuki Miyata³ (1.Tokyo City Univ., 2.JASRI, 3.AIST)

10:15 AM - 10:30 AM

[19a-E305-6] Interface dipole modulation in HfO₂/TiO₂/SiO₂ structures prepared by ALD

〇Shutaro Asanuma¹, Kyoko Sumita¹, Yusuke Miyaguchi², Kazumasa Hotta², Takehito Jimbo², Kazuya Saito², Noriyuki Miyata¹ (1.AIST, 2.ULVAC)

10:45 AM - 11:00 AM

△ [19a-E305-7] Resistive switching properties observed in Al/metal oxide/Si structure

〇Ryota Teragaki¹, Kohei Kobayashi¹, Haruhiko Yoshida¹, Koji Arafune¹, Teruo Kanki², Yasushi Hotta¹ (1.Univ. of Hyogo, 2.ISIR-Sanken)

11:00 AM - 11:15 AM

[19a-E305-8] Dependence of resistive switching characteristics on device size of Al/HfO₂/n-Si(100)

〇Kohei Kobayashi¹, Ryota Teragaki¹, Haruhiko Yoshida¹, Koji Arafune¹, Yasushi Hotta¹ (1.Univ. of Hyogo)

11:15 AM - 11:30 AM

[19a-E305-9] Improvement of Endurance for HfO₂-based Ferroelectric Tunnel Junction Memory

〇Marina Yamaguchi¹, Shosuke Fujii¹, Shoichi Kabuyanagi¹, Yuuichi Kamimuta¹, Tsunehiro Ino¹, Yasushi Nakasaki¹, Riichiro Takaishi¹, Reika Ichihara¹, Masumi Saitoh¹ (1.Toshiba Memory Corp.)

11:30 AM - 11:45 AM

[19a-E305-10] Effect of substrate type on electrical characteristics of TiN/Hf_0.5Zr_0.5O₂/Si MFS capacitors

〇Kasidit Toprasertpong¹, Kento Tahara¹, Taichiro Fukui¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

11:45 AM - 12:00 PM

[19a-E305-11] Study of annealing condition for improving quality of Si/Hf_0.5Zr_0.5O₂interface

〇Kento Tahara¹, Kato Kimihiko¹, Toprasertpong Kasidit¹, Takenaka Mitsuru¹, Takagi Shinichi¹ (1.Univ.Tokyo, Faculty of engineering)

12:00 PM - 12:15 PM

▲ [19a-E305-12] Evaluation of surface potential of ferroelectric-gate MOS capacitors
by C-V analyses

〇(M2)Chenyu Liao¹, Kasidit Toprasertpong¹, Taichirou Fukui¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The Univ. of Tokyo)

Oral presentation

[19p-E305-1~15] 13.3 Insulator technology

Thu. Sep 19, 2019 1:45 PM - 5:45 PM E305 (E305)

Toshifumi Irisawa(AIST), Kiyoteru Kobayashi(Tokai Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[19p-E305-1] Evaluation of the density of thermal oxide films on SiC(000-1)

〇Satoru Iioka¹, Ryu Hasunuma¹ (1.Univ. of Tsukuba)

2:00 PM - 2:15 PM

△ [19p-E305-2] Quantitative Analysis of Plasma-induced Defect Density in Si-based Dielectric Films Using Conductance Method

〇Tomohiro Kuyama¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ.)

2:15 PM - 2:30 PM

[19p-E305-3] Effect of process conditions on properties of an OER- CVD SiO₂ film at room temperature

〇Takayuki Hagiwara¹, Naoto Kameda¹, Toshinori Miura¹, Yoshiki Morikawa¹, Mitsuru Kekura¹, Ryoji Kosugi², Ken Nakamura², Hidehiko Nonaka² (1.Meidensha Corp., 2.AIST)

2:30 PM - 2:45 PM

[19p-E305-4] Role of O₂ plasma on electrical characteristics improvement of ALD-deposited SiO₂ by microwave plasma

〇Toshiya Suzuki¹, Niklas Holm¹, Vaino Kilpi¹, Tom Blomberg¹ (1.Picosun Oy)

2:45 PM - 3:00 PM

▲ [19p-E305-5] Effect of Hydrogen Neutral Beam Treatment on Atomic layer deposition SiO₂

〇HuaHsuan Chen¹, Bei Bei Ge¹, Susumu Toko¹, Daisuke Ohori¹, Takuya Ozaki¹, Tomohiro Kubota², Mitsuya Utsuno², Toshihisa Nozawa², Seiji Samukawa³ (1.IFS,Tohoku Univ., 2.ASM Japan K.K., 3.AIMR, Tohoku Univ.)

3:00 PM - 3:15 PM

▲ [19p-E305-6] Atomic Layer Deposition of Yttrium Oxide from Y(iPrCp)3 Precursor and Oxygen with Argon boost

〇YuWei Lin¹, Jinhan Song¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kuniyuki Kakushima¹ (1.Tokyo Tech. School of Eng., 2.Tokyo Tech. IIR)

3:15 PM - 3:30 PM

[19p-E305-7] Electrical Characteristics of MOS Capacitors with Y₂O₃/SiO₂ Dielectric Stack

〇Jinhan Song¹, Atsuhiro Ohta¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kuniyuki Kakushima¹ (1.Tokyo Tech. School of Eng., 2.Tokyo Tech. IIR)

3:30 PM - 3:45 PM

[19p-E305-8] Formation of Yttrium Silicate Thin Layer by Atomic Layer Deposition

〇Atsuhiro Ohta¹, Jinhan Song¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kuniyuki Kakushima¹ (1.Tokyo Tech. school of Eng., 2.Tokyo Tech. IIR)

4:00 PM - 4:15 PM

[19p-E305-9] Fabrication of Al₂O₃/GeO₂/Ge structure using Kr/O₂ plasma oxidation method

〇(M2)Takeshi Tokorozuki¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TAT)

4:15 PM - 4:30 PM

[19p-E305-10] Manufacture and evaluation of High-k/GeO₂/Ge

〇Kenichirou Toyoda¹, Ryuichiro Watanabe¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TAT)

4:30 PM - 4:45 PM

[19p-E305-11] Study of GeO desorption mechanism in GeO₂/Ge structure

〇Ryuichirou Watanabe¹, Kenichiro Toyoda¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TAT)

4:45 PM - 5:00 PM

[19p-E305-12] Introduction of Hf-Post Metallization Annealing at GeO₂/Ge interface

〇(M1)Haruka Horiguchi¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TAT)

5:00 PM - 5:15 PM

▼ [19p-E305-13] Improvement of Si_0.78Ge_0.22 MOS interface properties by using TiN/Y₂O₃ gate stacks with TMA passivation

〇TsungEn Lee¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The Univ. of Tokyo)

5:15 PM - 5:30 PM

△ [19p-E305-14] Low Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices

〇(M2)Kento Iseri¹, Wei-Chen Wen¹, Keisue Yamamoto¹, Dong Wang¹, Hiroshi Nakashima² (1.IGSES, Kyushu Univ., 2.GIC, Kyushu Univ.)

5:30 PM - 5:45 PM

▼ [19p-E305-15] Evaluation of Border Traps in Al₂O₃/GeO_x/p-Ge Stacks Using Deep-Level Transient Spectroscopy

〇(DC)Weichen Wen¹, Keisuke Yamamoto¹, Dong Wang¹, Hiroshi Nakashima² (1.IGSES, Kyushu Univ., 2.GIC, Kyushu Univ.)

Poster presentation

[18p-PB2-1~4] 13.3 Insulator technology

Wed. Sep 18, 2019 4:00 PM - 6:00 PM PB2 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[18p-PB2-1] Orientation dependence of the penetration barrier of H₂O molecule into SiO₂ and Si₃N₄ films

〇Tomoki Oku¹, Masahiro Totsuka¹, Hajime Sasaki¹ (1.Mitsubishi Electric)

4:00 PM - 6:00 PM

▲ [18p-PB2-2] The effect of Hf-ion implantation on the charge trapping characteristics of MONOS-type memory devices

〇(M1)Rahul Agrawal¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

4:00 PM - 6:00 PM

[18p-PB2-3] Characterization of insulation properties and magnetic permeability of composites
based on epoxy resin containing iron powders

〇Katsuya Hirata¹, Gaku Obara¹, Hiroshi Katsumata¹ (1.Meiji Univ.)

4:00 PM - 6:00 PM

▲ [18p-PB2-4] FT-IR Study on Chemical Bonds of Low-Temperature Si Oxide Films Preserved in Various Conditions

〇(M1)Weiqi Zhou¹, Susumu Horita¹ (1.Japan Adv. Inst. Sci & Tech)

Sessions

13 Semiconductors » 13.3 Insulator technology

[19a-E305-1~12] 13.3 Insulator technology

[19a-E305-1] TEM Tracking Study of Silicon Nanopillar Oxidation

[19a-E305-2] Re-Examination of sulfur treatment effects on Al₂O₃/InGaAs MOS interface properties

[19a-E305-3] Leakage current of sputter fabricated AlScN film

[19a-E305-4] Inspection and evaluation of chemical solution oxidation methods for metal / Si structures

[19a-E305-5] Bias-applied hard x-ray photoelectron spectroscopy study of HfO₂/SiO₂ interface dipole modulation

[19a-E305-6] Interface dipole modulation in HfO₂/TiO₂/SiO₂ structures prepared by ALD

△ [19a-E305-7] Resistive switching properties observed in Al/metal oxide/Si structure

[19a-E305-8] Dependence of resistive switching characteristics on device size of Al/HfO₂/n-Si(100)

[19a-E305-9] Improvement of Endurance for HfO₂-based Ferroelectric Tunnel Junction Memory

[19a-E305-10] Effect of substrate type on electrical characteristics of TiN/Hf_0.5Zr_0.5O₂/Si MFS capacitors

[19a-E305-11] Study of annealing condition for improving quality of Si/Hf_0.5Zr_0.5O₂interface

▲ [19a-E305-12] Evaluation of surface potential of ferroelectric-gate MOS capacitors
by C-V analyses

[19p-E305-1~15] 13.3 Insulator technology

[19p-E305-1] Evaluation of the density of thermal oxide films on SiC(000-1)

△ [19p-E305-2] Quantitative Analysis of Plasma-induced Defect Density in Si-based Dielectric Films Using Conductance Method

[19p-E305-3] Effect of process conditions on properties of an OER- CVD SiO₂ film at room temperature

[19p-E305-4] Role of O₂ plasma on electrical characteristics improvement of ALD-deposited SiO₂ by microwave plasma

▲ [19p-E305-5] Effect of Hydrogen Neutral Beam Treatment on Atomic layer deposition SiO₂

▲ [19p-E305-6] Atomic Layer Deposition of Yttrium Oxide from Y(iPrCp)3 Precursor and Oxygen with Argon boost

[19p-E305-7] Electrical Characteristics of MOS Capacitors with Y₂O₃/SiO₂ Dielectric Stack

[19p-E305-8] Formation of Yttrium Silicate Thin Layer by Atomic Layer Deposition

[19p-E305-9] Fabrication of Al₂O₃/GeO₂/Ge structure using Kr/O₂ plasma oxidation method

[19p-E305-10] Manufacture and evaluation of High-k/GeO₂/Ge

[19p-E305-11] Study of GeO desorption mechanism in GeO₂/Ge structure

[19p-E305-12] Introduction of Hf-Post Metallization Annealing at GeO₂/Ge interface

▼ [19p-E305-13] Improvement of Si_0.78Ge_0.22 MOS interface properties by using TiN/Y₂O₃ gate stacks with TMA passivation

△ [19p-E305-14] Low Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices

▼ [19p-E305-15] Evaluation of Border Traps in Al₂O₃/GeO_x/p-Ge Stacks Using Deep-Level Transient Spectroscopy

[18p-PB2-1~4] 13.3 Insulator technology

[18p-PB2-1] Orientation dependence of the penetration barrier of H₂O molecule into SiO₂ and Si₃N₄ films

▲ [18p-PB2-2] The effect of Hf-ion implantation on the charge trapping characteristics of MONOS-type memory devices

[18p-PB2-3] Characterization of insulation properties and magnetic permeability of composites
based on epoxy resin containing iron powders

▲ [18p-PB2-4] FT-IR Study on Chemical Bonds of Low-Temperature Si Oxide Films Preserved in Various Conditions

Authentication

Sessions

13 Semiconductors » 13.3 Insulator technology

[19a-E305-1~12] 13.3 Insulator technology

△ [19a-E305-7] Resistive switching properties observed in Al/metal oxide/Si structure

▲ [19a-E305-12] Evaluation of surface potential of ferroelectric-gate MOS capacitors by C-V analyses

[19p-E305-1~15] 13.3 Insulator technology

△ [19p-E305-2] Quantitative Analysis of Plasma-induced Defect Density in Si-based Dielectric Films Using Conductance Method

▲ [19p-E305-5] Effect of Hydrogen Neutral Beam Treatment on Atomic layer deposition SiO2

▲ [19p-E305-6] Atomic Layer Deposition of Yttrium Oxide from Y(iPrCp)3 Precursor and Oxygen with Argon boost

▼ [19p-E305-13] Improvement of Si0.78Ge0.22 MOS interface properties by using TiN/Y2O3 gate stacks with TMA passivation

△ [19p-E305-14] Low Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices

▼ [19p-E305-15] Evaluation of Border Traps in Al2O3/GeOx/p-Ge Stacks Using Deep-Level Transient Spectroscopy

[18p-PB2-1~4] 13.3 Insulator technology

▲ [18p-PB2-2] The effect of Hf-ion implantation on the charge trapping characteristics of MONOS-type memory devices

▲ [18p-PB2-4] FT-IR Study on Chemical Bonds of Low-Temperature Si Oxide Films Preserved in Various Conditions

Authentication

▲ [19a-E305-12] Evaluation of surface potential of ferroelectric-gate MOS capacitors
by C-V analyses

▲ [19p-E305-5] Effect of Hydrogen Neutral Beam Treatment on Atomic layer deposition SiO₂

▼ [19p-E305-13] Improvement of Si_0.78Ge_0.22 MOS interface properties by using TiN/Y₂O₃ gate stacks with TMA passivation

▼ [19p-E305-15] Evaluation of Border Traps in Al₂O₃/GeO_x/p-Ge Stacks Using Deep-Level Transient Spectroscopy