[19a-E305-1~12] 13.3 Insulator technology

[19a-E305-9] Improvement of Endurance for HfO₂-based Ferroelectric Tunnel Junction Memory

〇Marina Yamaguchi¹, Shosuke Fujii¹, Shoichi Kabuyanagi¹, Yuuichi Kamimuta¹, Tsunehiro Ino¹, Yasushi Nakasaki¹, Riichiro Takaishi¹, Reika Ichihara¹, Masumi Saitoh¹ (1.Toshiba Memory Corp.)

Keywords:Ferroelectric HfO2, Ferroelectric Tunnel Junction, Memory

A HfO₂-based ferroelectric tunnel junction (FTJ) memory is a promising candidate as we have reported its device characteristics suitable for low-power high-density applications, such as low operation current in nA-range, self-compliance, intrinsic diode properties, as well as good compatibility with CMOS process. To apply the HfO₂ FTJ to such applications, it is necessary to ensure long-term reliability, e.g., sufficient set/reset cycling endurance. In this study, we demonstrated the endurance improvement by stress sequence optimization.