Interface dipole modulation in HfO2/TiO2/SiO2 structures prepared by ALD

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

Thu. Sep 19, 2019 9:00 AM - 12:15 PM E305 (E305)

Shosuke Fujii(Toshiba Memory), Yasushi Hotta(Univ. of Hyogo)

10:15 AM - 10:30 AM

〇Shutaro Asanuma¹, Kyoko Sumita¹, Yusuke Miyaguchi², Kazumasa Hotta², Takehito Jimbo², Kazuya Saito², Noriyuki Miyata¹ (1.AIST, 2.ULVAC)

Keywords:HfO2, memory, ALD