[19a-E305-1~12] 13.3 Insulator technology

[19a-E305-5] Bias-applied hard x-ray photoelectron spectroscopy study of HfO₂/SiO₂ interface dipole modulation

〇Hiroshi Nohira¹, Reito Wada¹, Akira Yasui², Noriyuki Miyata³ (1.Tokyo City Univ., 2.JASRI, 3.AIST)

Keywords:voltage applied hard X-ray photoelectron spectroscopy, interface dipole, MIM structure

Using a sample of Ir / HfO₂ / TiO₂ / SiO₂ / TaN / SiO₂ / Si (100) structure, we evaluated the change by the bias application of the interface dipole which is a modulation layer using voltage applied hard X-ray photoelectron spectroscopy measurement (BL47XU line at SPring-8). According to the experimental results, in the case where the bias application time is short, the binding energy of the Hf 3d peak does not change. However, a slight potential difference remained after applying -3 V for a long time. Detailed analysis results will be reported on the day.