[19p-E305-1~15] 13.3 Insulator technology

▲ [19p-E305-5] Effect of Hydrogen Neutral Beam Treatment on Atomic layer deposition SiO₂

〇HuaHsuan Chen¹, Bei Bei Ge¹, Susumu Toko¹, Daisuke Ohori¹, Takuya Ozaki¹, Tomohiro Kubota², Mitsuya Utsuno², Toshihisa Nozawa², Seiji Samukawa³ (1.IFS,Tohoku Univ., 2.ASM Japan K.K., 3.AIMR, Tohoku Univ.)

Keywords:atomic layer deposition, neutral beam, silicon dioxide

In this study, some results of a novel deposition technique, neutral beam enhanced atomic layer deposition (NBEALD), are presented. We used this novel technique which utilizes neutral beam technology in atomic layer deposition to deposit high-quality SiO₂ layer using precursor Aminosilane and O₂ neutral beam at low substrate temperature near room temperature (30℃). The results demonstrate typical ALD process and good thickness control at angstrom level. Film properties such as chemical composition, surface roughness, uniformity, electrical property and wet etch rate for different experiment conditions are compared and discussed in this study. In addition, we present a way to improve the film quality which uses the hydrogen neutral beam post-treatment after NBEALD deposition.