The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[19a-E304-1~12] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Thu. Sep 19, 2019 9:00 AM - 12:00 PM E304 (E304)

Reo Kometani(Univ. of Tokyo), Fukushima Takafumi(Tohoku University)

11:15 AM - 11:30 AM

[19a-E304-10] Low-height microbump bonding for 3D integration with fine-pitch electrodes

Yuki Miwa1, Sungho Lee2, Rui Liang1, Kousei Kumahara1, Hisashi Kino3, Takafumi Fukushima2, Tetsu Tanaka1,2 (1.Grad. Sch. of Biomedical Engineering, Tohoku Univ., 2.Grad. Sch. of Engineering, Tohoku Univ., 3.FRIS, Tohoku Univ.)

Keywords:microbump, 3D, fine-pitch

Now that Moore's law has faced its limit, system-level integration has attracted much attention for the development of electron devices. 3D- integration technology using TSVs is especially expected to play an important role to enhance the performances. Fine-pitch microbump is required for high-density 3D interconnection, which is one of the key technologies to realize high-performance 3D integration system. However, capillary underfilling has been becoming difficult as fine-pitch bumps are fabricated. In this study, we evaluated low-height microbump bonding using ultra-thin NCF, which can provide the microbump interconnection with further scaling.