The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[19a-E304-1~12] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Thu. Sep 19, 2019 9:00 AM - 12:00 PM E304 (E304)

Reo Kometani(Univ. of Tokyo), Fukushima Takafumi(Tohoku University)

10:30 AM - 10:45 AM

[19a-E304-7] A Study on SCD Electrodes for Au-Proof-Mass 3-axis MEMS Accelerometer (2)

Takashi Ichikawa1, Shota Otobe1, Ken Atsumi1, Tatsuya Koga1, Daisuke Yamane1, Shin-ichi Iida2, Hiroyuki Ito1, Noboru Ishihara1, Katsuyuki Machida1, Masato Sone1, Kazuya Masu1 (1.Tokyo Tech, 2.NTT-AT)

Keywords:MEMS Accelerometer, Multi-layer metal technology, high resolution

This paper describes relationships between the sensitivity of Au proof-mass tri-axis MEMS (Microelectromechanical systems) accelerometer and the structure parameter of SCD (segmented capacitance detection) electrode. We have proposed SCD for high resolution Au proof-mass MEMS accelerometers. The SCD is useful to simplify the MEMS structures. We investigate analytical equations to obtain the sensitivity. As a result, it is revealed that the sensitivity changes as a function of the SCD structure parameter.