The 80th JSAP Autumn Meeting 2019

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13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[19a-E304-1~12] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Thu. Sep 19, 2019 9:00 AM - 12:00 PM E304 (E304)

Reo Kometani(Univ. of Tokyo), Fukushima Takafumi(Tohoku University)

10:45 AM - 11:00 AM

△ [19a-E304-8] Measurement of Stress Distribution in Thin Film Mechanical Resonator by Micro-Raman Spectroscopy

〇(M1)Masaki Saito1, Shin-ichi Warisawa1, Reo Kometani1 (1.Grad. Sch. of Front. Sci., Univ. of Tokyo)

Keywords:NEMS, stress, Micro-Raman Spectroscopy

Stress occurs in a thin film mechanical resonator which is a component of NEMS. Raman spectroscopy is one of the methods to measure stress, but its applicability to a thin film has not been clear. In this study, we modeled mechanism of spectrum formation when Raman spectroscopy is applied to a thin film which has stress distribution inside and proposed a method to quantify the stress distribution in a thin film.