The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

9 Applied Materials Science » 9.2 Nanoparticles, Nanowires and Nanosheets

[19a-E317-1~10] 9.2 Nanoparticles, Nanowires and Nanosheets

Thu. Sep 19, 2019 9:00 AM - 11:45 AM E317 (E317)

Kazuki Nagashima(Kyushu Univ.), Takuro Hosomi(Kyushu Univ.)

11:00 AM - 11:15 AM

[19a-E317-8] Characterization of InP nanowire surrounding-gate transistor

Yu Katsumi1, Hironori Gamo1, Junichi Motohisa1, Katsuhiro Tomioka1 (1.IST and RCIQE, Hokkaido Univ.)

Keywords:nanowire, III-V compound semiconductor

III-V compound semiconductors can increase the on-state current at low voltage because of their high mobility. In addition, the nanowire (NW) structure can form a vertical surrounding-gate structure and can suppress the off-leak current. Among III-V NWs, InP NWs have a wurtzite single-crystal structure with atomically flat facets, which is beneficial for good oxide-semiconductor interfaces. Here, we report on the influence of channel length on vertical surrounding-gate transistor characteristics using InP NWs.