[19a-E317-1~10] 9.2 Nanoparticles, Nanowires and Nanosheets

△ [19a-E317-8] Characterization of InP nanowire surrounding-gate transistor

〇Yu Katsumi¹, Hironori Gamo¹, Junichi Motohisa¹, Katsuhiro Tomioka¹ (1.IST and RCIQE, Hokkaido Univ.)

Keywords:nanowire, III-V compound semiconductor

III-V compound semiconductors can increase the on-state current at low voltage because of their high mobility. In addition, the nanowire (NW) structure can form a vertical surrounding-gate structure and can suppress the off-leak current. Among III-V NWs, InP NWs have a wurtzite single-crystal structure with atomically flat facets, which is beneficial for good oxide-semiconductor interfaces. Here, we report on the influence of channel length on vertical surrounding-gate transistor characteristics using InP NWs.