Basic characteristics of ultrathin InN layers prepared by sputtering on various AlN templates

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 19, 2019 1:15 PM - 7:00 PM E310 (E310)

Tsutomu Araki(Ritsumeikan Univ.), Ryuji Katayama(Osaka Univ.), Ryota Ishii(Kyoto Univ.)

6:30 PM - 6:45 PM

〇(M2)Dayeon Jeong¹, Atsushi Kobayashi¹, Kohei Ueno¹, Hiroshi Fujioka^1,2 (1.Institute of Industrial Scienc, The University of Tokyo, 2.JST-ACCEL)

Keywords:nitride crystal