[19p-PB3-1~24] 13.7 Compound and power electron devices and process technology

[19p-PB3-10] Trap state characterization of Al₂O₃/AlInGaN/GaN
metal-insulator-semiconductor heterostructures

〇Hirotaka Fujita¹, Debaleen Biswas¹, Naoki Torii¹, Takahiro Yoshida¹, Toshiharu Kubo¹, Takashi Egawa¹ (1.Nagoya Inst.of Tech.)

Keywords:nitride semiconductor, quaternary nitride

Recently, Al₂O₃/AlInGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have been demonstrated by various research groups. However, there is a lack of adequate information about the trap states of AlInGaN/GaN-based MIS-HEMTs.In this study, we characterized trap states in Al₂O₃/AlInGaN/GaN MIS heterostructures with quaternary nitrides of different compositions.