The 80th JSAP Autumn Meeting 2019

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-PB3-1~24] 13.7 Compound and power electron devices and process technology

Thu. Sep 19, 2019 1:30 PM - 3:30 PM PB3 (PB)

1:30 PM - 3:30 PM

[19p-PB3-4] Mechanism of plasma etching damages in GaN

〇Akira Shingu1, Masamichi Annen1, Seiji Nakamura1 (1.Tokyo Metropolitan Univ.)

Keywords:Plasma etching damage, GaN