11:30 AM - 11:45 AM
△ [20a-E301-10] Effect of interface state density on channel mobility in GaN lateral MISFET 2.
Keywords:GaN, Dit, Channel mobility
To improve the performance of GaN-based MISFET, it is required to increase the channel mobility. In the case of SiO2/Si system, it is known that the carrier scattering factors differ for effective field perpendicular to channel or surface carrier concentration. In this paper, we report that the effect of gate metallization process on the interface state density and the channel mobility in Al2O3/GaN interface.