11:45 AM - 12:00 PM
△ [20a-E301-11] Influence of ALD Precursor on Electrical Properties of Al2O3/AlGaN/GaN MIS Structure
Keywords:AlGaN/GaN, DMAH, atomic layer deposition
DMAH (C2H7Al) and TMA (C3H9Al) were used as Al precursor of ALD to deposite the insulator for fabrication the Al2O3/AlGaN/GaN MIS structure. Electrical characteristics were compared between DAMH and TMA. In Al2O3/AlGaN/GaN MIS structure, it was clarified that DMAH was able to improve interface characteristics as compared with TMA.