[20a-E301-1~12] 13.7 Compound and power electron devices and process technology

△ [20a-E301-8] Improvement of Gate Insulator Reliability by Controlling Diffusion into SiO₂ layer in SiO₂/GaN MOS Devices

〇(M1)Yuhei Wada¹, Nozaki Mikito¹, Hosoi Takuji¹, Shimura Takayoshi¹, Watanabe Heiji¹ (1.Osaka Univ.)

Keywords:semiconductor, Gallium Nitride, Gate Insulator

In order to realize a high performance GaN power MOSFET, it is essential to form a high quality gate stack. We have fabricated MOS capacitors with GaO_x interface layers by thermal oxidation for SiO₂/GaN structure and reported good interface characteristics. On the other hand, there is a concern that the reliability of the gate insulating film deteriorates due to the diffusion of Ga into SiO₂. In this paper, we report the improvement of gate insulator reliability for SiO₂/GaN MOS devices by controlling diffusion of Ga with SiO₂ patterning.