11:00 AM - 11:15 AM
△ [20a-E301-8] Improvement of Gate Insulator Reliability by Controlling Diffusion into SiO2 layer in SiO2/GaN MOS Devices
Keywords:semiconductor, Gallium Nitride, Gate Insulator
In order to realize a high performance GaN power MOSFET, it is essential to form a high quality gate stack. We have fabricated MOS capacitors with GaOx interface layers by thermal oxidation for SiO2/GaN structure and reported good interface characteristics. On the other hand, there is a concern that the reliability of the gate insulating film deteriorates due to the diffusion of Ga into SiO2. In this paper, we report the improvement of gate insulator reliability for SiO2/GaN MOS devices by controlling diffusion of Ga with SiO2 patterning.