[20p-B31-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [20p-B31-12] Reduction of the Threading Dislocation Density of α-Ga₂O₃ by Multi-layered ELO

〇Katsuaki Kawara¹, Yuichi Oshima², Mitsuru Okigawa¹, Takashi Shinohe¹, Toshimi Hitora¹ (1.FLOSFIA, 2.NIMS)

Keywords:Ga2O3, HVPE, ELO

Alpha-gallium oxide (α-Ga₂O₃) is promising as a material for the power device semiconductors. Freestanding α-Ga₂O₃ substrates cannot be produced through the melt-growth technique, since α-Ga₂O₃ is thermodynamically meta-stable. Thus the α-Ga₂O₃ films are grown by heteroepitaxy. There are a large number of dislocations in the α-Ga₂O₃ films because of the lattice mismatch. Accordingly dislocations need to be reduced in order to improve the performance of α-Ga₂O₃ devices. In this study, we utilized multi-layered ELO technique to reduce dislocation density of α-Ga₂O₃ films grown by HVPE.