[20p-E301-1~9] Etching Technology for Nitride Semiconductors: recent progress in high-controllable and low-damaging process

[20p-E301-5] Mesa-structure Vertical GaN p-n Junction Diodes by PEC Etching

〇Tomoyoshi Mishima¹ (1.Hosei Univ.)

Keywords:GaN, diode, wet etching

Recently, damage-free deep photo-electrochemical (PEC) etching of GaN has been developed by Horikiri et al. Application of the PEC etching to fabrication of mesa-structure GaN p-n junction diodes and its impact on their current-voltage characteristics will be talked.