[20p-E301-1~9] Etching Technology for Nitride Semiconductors: recent progress in high-controllable and low-damaging process

[20p-E301-4] Wet-etching of GaN for power and RF devices

〇Fumimasa Horikiri¹, Noboru Fukuhara¹ (1.SCIOCS)

Keywords:GaN, wet etching, Photoelectrochemical

The cathode design is discussed for applying the simple contactless PEC etching for GaN-HEMT devices which consists of GaN-epi on semi-insulating substrate. Fortunately, GaN-HEMT has ohmic electrode which acts as cathode in contactless PEC etching, thus, we succeeded in recess-etching of GaN-HEMT epilayer grown on semi-insulating SiC substrate. These results indicate that PEC etching technologies are becoming to practical device fabrication process.