Symposium (Oral)
Symposium (technical) » Etching Technology for Nitride Semiconductors: recent progress in high-controllable and low-damaging process
Fri. Sep 20, 2019 1:30 PM - 5:35 PM E301 (E301)
Masashi Kato(Nagoya Inst. of Tech.), Taketomo Sato(Hokkaido Univ.)
△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above
1:30 PM - 1:35 PM
〇Taketomo Sato1 (1.Hokkaido Univ.)
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1:35 PM - 2:05 PM
〇Yasuhisa Sano1, Kenta Arima1, Kazuto Yamauchi1 (1.Osaka Univ.)
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2:05 PM - 2:35 PM
〇Shohei Ito1, Agnieszka Kurek1, Mike Cooke1 (1.Oxford Instruments)
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2:35 PM - 3:05 PM
〇Fumimasa Horikiri1, Noboru Fukuhara1 (1.SCIOCS)
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3:05 PM - 3:35 PM
〇Tomoyoshi Mishima1 (1.Hosei Univ.)
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3:50 PM - 4:20 PM
〇Shinji Yamada1,2,3, Hideki Sakurai1,2,3, Yamato Osada3, Toshiyuki Nakamura3, Ryuichiro Kamimura3, Jun Suda1,2, Tetsu Kachi1 (1.Nagoya Univ. IMaSS, 2.Nagoya Univ., 3.ULVAC ISET)
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4:20 PM - 4:50 PM
〇Kenji Shiojima1 (1.Univ. of Fukui)
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4:50 PM - 5:20 PM
〇Kenta Sugawara1, Masaya Okada1, Hiroyuki Ichikawa1, Kazutaka Inoue1, Daisuke Ohori2, Seiji Samukawa2,3 (1.Sumitomo Electric Industries, Ltd., 2.IFS, Tohoku Univ., 3.AIMR, Tohoku Univ.)
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5:20 PM - 5:35 PM
〇Masahiko Kuraguchi1, Toshiki Hikosaka1, Aya Shindome1, Yosuke Kajiwara1, Daimotsu Kato1, Hiroshi Ono1, Akira Mukai1, Shinya Nunoue1 (1.Corporate R&D Center, Toshiba Corp.)
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