9:00 AM - 9:15 AM
[21a-E301-1] Study on low damage etching of GaN using nitrogen plasma
Keywords:GaN
Presentation information
Oral presentation
13 Semiconductors » 13.7 Compound and power electron devices and process technology
[21a-E301-1~13] 13.7 Compound and power electron devices and process technology
Sat. Sep 21, 2019 9:00 AM - 12:30 PM E301 (E301)
Kozo Makiyama(Fujitsu Lab.)