Growth of alpha-Ga<sub>2</sub>O<sub>3</sub> thin films using choride-based dilute gallium source solutions by mist chemical vapor deposition (II)

Kazuyuki Uno; Kazutoshi Matsumoto; Ichiro Tanaka

Presentation information

Oral presentation

Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Sep 21, 2019 12:45 PM - 4:30 PM B31 (B31)

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takumi Ikenoue(Kyoto Univ.)

12:45 PM - 1:00 PM

[21p-B31-1] Growth of alpha-Ga₂O₃ thin films using choride-based dilute gallium source solutions by mist chemical vapor deposition (II)

〇Kazuyuki Uno¹, Kazutoshi Matsumoto¹, Ichiro Tanaka¹ (1.Systems Eng., Wakayama Univ.)

Keywords:gallium oxide, mist chemical vapor deposition

We investigated relationships between the pH value of source solutions and the growh rates in the thin film growth of alpha-Ga₂O₃ by mist chemical vapor deposition.

Presentation information

[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-1] Growth of alpha-Ga2O3 thin films using choride-based dilute gallium source solutions by mist chemical vapor deposition (II)

[21p-B31-1] Growth of alpha-Ga₂O₃ thin films using choride-based dilute gallium source solutions by mist chemical vapor deposition (II)