Influence of Growth Temperature and Input VI/III Ratio on HVPE Growth of β-Ga<sub>2</sub>O<sub>3</sub>

Presentation information

Oral presentation

Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Sep 21, 2019 12:45 PM - 4:30 PM B31 (B31)

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takumi Ikenoue(Kyoto Univ.)

1:30 PM - 1:45 PM

〇Ken Goto¹, Ryo Miura¹, Takashi Kamo¹, Nao Takekawa¹, Hisashi Murakami^1,2, Yoshinao Kumagai^1,2 (1.Tokyo Univ. of A & T, 2.TUAT IGIR)

Keywords:Gallium Oxide, Halide Vapor Phase Epitaxy