[21p-C309-1~9] 6.1 Ferroelectric thin films

[21p-C309-2] Piezoelectric properties of hard PZT (111) single crystal thin films

〇Akio Konishi¹, Takekazu Shigenai¹, Yukinori Tani¹, Takeshi Kijima¹ (1.KRYSTAL Inc.)

Keywords:ferroelectric

We use vapor deposited 50nm-ZrO2 as a buffer layer directly on the Si (111) substrate, further form a 150nm-Pt electrode thin film by RF sputtering method, and further thickness of system PZT (Zr / Ti = 30/70) When 1 um was grown, a high quality PZT (111) thin film. Furthermore, when pole evaluation of the obtained PZT thin film was performed, from the pole figure, six-fold symmetry was shown, and strong orientation was also shown in a plane different from a normal natural alignment film.