Akihiro Hayasaka

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Speaker, Author, Co-Author

Sat. Mar 9, 2019 2:00 PM - 5:45 PM M121 (H121)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

5:15 PM - 5:30 PM

[9p-M121-13] N-polar GaN HEMT with Al₂O₃ gate insulator

〇Akihiro Hayasaka¹, Ryosuke Aonuma¹, Koushi Hotta¹, Isao Makabe², Shigeki Yoshida², Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.Sumitomo Electric Industries, Ltd)